stD10PF06 p - channel 60v - 0.18 w - 10a to-252 stripfet ? power mosfet n typical r ds(on) = 0.18 w n exceptional dv/dt capability n 100% avalanche tested n low gate charge n application oriented characterization n add suffix ot4o for ordering in tape & reel description this power mosfet is the latest development of stmicroelectronics unique osingle feature size ? o strip-based process. the resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturing reproducibility. applications n motor control n dc-dc & dc-ac converters ? internal schematic diagram april 1999 absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs =0) 60 v v dgr drain- gate voltage (r gs =20k w )60v v gs gate-source voltage 20 v i d drain current (continuous) at t c =25 o c10a i d drain current (continuous) at t c =100 o c7a i dm ( ? ) drain current (pulsed) 40 a p tot total dissipation at t c =25 o c40w derating factor 0.27 w/ o c dv/dt peak diode recovery voltage slope 6 v/ns t stg storage temperature -65 to 175 o c t j max. operating junction temperature 175 o c ( ? ) pulse width limited by safe operating area ( 1 )i sd 10 a, di/dt 300 a/ m s, v dd v (br)dss ,t j t jmax note: for the p-channel mosfet actual polarity of voltages and current has to be reversed type v dss r ds(o n) i d stD10PF06 60 v < 0.20 w 10 a 1 3 dpak to-252 (suffix ot4o) 1/8
thermal data r thj-case r thj-amb r thc-sink t l thermal resistance junction-case max thermal resistance junction-ambient max thermal resistance case-sink typ maximum lead temperature for soldering purpose 3.75 100 1.5 275 o c/w o c/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 10 a e as single pulse avalanche energy (starting t j =25 o c, i d =i ar ,v dd =25v) 50 mj electrical characteristics (t case =25 o c unless otherwise specified) off symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d =250 m av gs =0 60 v i dss zero gate voltage drain current (v gs =0) v ds =maxrating v ds =maxrating t c = 125 o c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 20 v 100 na on ( * ) symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a23.44v r ds(on) static drain-source on resistance v gs =10v i d = 5 a 0.18 0.20 w i d(o n) on state drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 10 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(o n) xr ds(on )ma x i d =5a 2 5 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25v f=1mhz v gs = 0 850 230 75 pf pf pf stD10PF06 2/8
electrical characteristics (continued) switching on symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =30v i d =6a r g =4.7 w v gs =10v (resistive load, see fig. 3) 20 40 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =48v i d =12a v gs =10v 16 4 6 21 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd =30v i d =6a r g =4.7 w v gs =10v (resistive load, see fig. 3) 40 10 ns ns t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =48v i d =12a r g =4.7 w v gs =10v (inductive load, see fig. 5) 10 17 30 ns ns ns source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 10 40 a a v sd ( * )forwardonvoltage i sd =10a v gs =0 2.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 12 a di/dt = 100 a/ m s v dd =30v t j =150 o c (see test circuit, fig. 5) 100 260 5.2 ns m c a ( * ) pulsed: pulse duration = 300 m s, duty cycle 1.5 % ( ? ) pulse width limited by safe operating area safe operating area thermal impedance stD10PF06 3/8
output characteristics transconductance gate charge vs gate-source voltage transfer characteristics static drain-source on resistance capacitance variations stD10PF06 4/8
normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized on resistance vs temperature stD10PF06 5/8
fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuits for resistive load fig. 2: unclamped inductive waveform fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times stD10PF06 6/8
dim. mm inch min. typ. max. min. typ. max. a 2.2 2.4 0.086 0.094 a1 0.9 1.1 0.035 0.043 a2 0.03 0.23 0.001 0.009 b 0.64 0.9 0.025 0.035 b2 5.2 5.4 0.204 0.212 c 0.45 0.6 0.017 0.023 c2 0.48 0.6 0.019 0.023 d 6 6.2 0.236 0.244 e 6.4 6.6 0.252 0.260 g 4.4 4.6 0.173 0.181 h 9.35 10.1 0.368 0.397 l2 0.8 0.031 l4 0.6 1 0.023 0.039 == d l2 l4 13 == b e == b2 g 2 a c2 c h a1 detail oao a2 detail oao to-252 (dpak) mechanical data 0068772-b stD10PF06 7/8
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibil ity for the consequences of use of such information nor for any infringement of patents or other rights of third part ies which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectro nics. specific ation mentioned in this publication are subjec t to change without notice. this publication supersedes and replaces all informat ion previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1999 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysi a - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. http://www.st.com . stD10PF06 8/8
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